052-6323 rev d 6 - 2011 absolute maximum ratings thermal and mechanical characteristics symbol parameter ratings unit v ces collector emitter voltage 600 v i c1 continuous collector current @ t c = 25c 143 a i c2 continuous collector current @ t c = 100c 80 i cm pulsed collector current 1 240 v ge gate-emitter voltage 2 30 v p d total power dissipation @ t c = 25c 625 w ssoa switching safe operating area @ t j = 150c 240a @ 600v t j , t stg operating and storage junction temperature range -55 to 150 c t l lead temperature for soldering: 0.063" from case for 10 seconds 300 single die igbt typical applications zvs phase shifted and other full bridge half bridge high power pfc boost welding ups, solar, and other inverters high frequency, high ef? ciency industrial features fast switching with low emi very low e off for maximum ef? ciency ultra low c res for improved noise immunity low conduction loss low gate charge increased intrinsic gate resistance for low emi rohs compliant APT80GA60B apt80ga60s 600v APT80GA60B power mos 8 ? is a high speed punch-through switch-mode igbt. low e off is achieved through leading technology silicon design and lifetime control processes. a reduced e off - v ce(on) tradeoff results in superior ef ? ciency compared to other igbt technologies. low gate charge and a greatly reduced ratio of c res /c ies provide excellent noise immunity, short delay times and simple gate drive. the intrinsic chip gate resistance and capacitance of the poly-silicone gate structure help control di/dt during switching, resulting in low emi, even when switching at high frequency. symbol characteristic min typ max unit r jc junction to case thermal resistance - - 0.2 c/w w t package weight - 5.9 - g torque mounting torque (to-247 package), 4-40 or m3 screw 10 inlbf microsemi website - http://www.microsemi.com high speed pt igbt static characteristics t j = 25c unless otherwise speci? ed symbol parameter test conditions min typ max unit v br(ces) collector-emitter breakdown voltage v ge = 0v, i c = 1.0ma 600 v v ce(on) collector-emitter on voltage v ge = 1 5 v, i c = 47a t j = 25c 2.0 2.5 t j = 125c 1.9 v ge(th) gate emitter threshold voltage v ge =v ce , i c = 1ma 3 4.5 6 i ces zero gate voltage collector current v ce = 600v, v ge = 0v t j = 25c 250 a t j = 125c 1000 i ges gate-emitter leakage current v gs = 30v 100 na to-247 d 3 pak apt80ga60s downloaded from: http:///
052-6323 rev d 6 - 2011 dynamic characteristics t j = 25c unless otherwise speci? ed 1 repetitive rating: pulse width and case temperature limited by maximum junction temperature. 2 pulse test: pulse width < 380 s , duty cycle < 2%. 3 see mil-std-750 method 3471.4 r g is external gate resistance, not including internal gate resistance or gate driver impedance. (mic4452) 5 e on2 is the clamped inductive turn on energy that includes a commutating diode reverse recovery current in the igbt turn on energy loss. a combi device is used for the clamping diode.6 e off is the clamped inductive turn-off energy measured in accordance with jedec standard jesd24-1. microsemi reserves the right to change, without notice, the speci? cations and information contained herein. APT80GA60B_s symbol parameter test conditions min typ max unit c ies input capacitance capacitance v ge = 0v, v ce = 25v f = 1mhz 6390 pf c oes output capacitance 580 c res reverse transfer capacitance 63 q g 3 total gate charge gate charge v ge = 15v v ce = 300v i c = 47a 230 q ge gate-emitter charge 40 nc q gc gate- collector charge 78 ssoa switching safe operating area t j = 150c, r g = 4.7 4 , v ge = 15v, l= 100uh, v ce = 600v 240 a t d(on) turn-on delay time inductive switching (25c) v cc = 400v v ge = 15v i c = 47a r g = 4.7 4 t j = +25c 23 ns t r current rise time 27 t d(off) turn-off delay time 158 t f current fall time 78 e on2 turn-on switching energy 840 j e off 6 turn-off switching energy 751 t d(on turn-on delay time inductive switching (125c) v cc = 400v v ge = 15v i c = 47a r g = 4.7 4 t j = +125c 21 ns t r current rise time 31 t d(off) turn-off delay time 194 t f current fall time 132 e on2 turn-on switching energy 1275 j e off 6 turn-off switching energy 1112 downloaded from: http:///
052-6323 rev d 6 - 2011 typical performance curves APT80GA60B_s 0 25 50 75 100 125 150 25 50 75 100 125 150 0 1 2 3 4 5 0 50 100 150 0 2 4 6 8 10 12 14 16 0 4 8 12 15 200 240 280 0 1 2 3 4 6 8 10 12 14 16 0 40 80 120 160 200 240 280 320 360 0 2 4 6 8 10 12 0 25 50 75 100 125 150 175 200 225 250 275 300 0 4 8 12 16 20 24 28 32 0 25 50 75 100 125 150 0 1 2 3 4 5 250 s pulse test<0.5 % duty cycle t j = 25c. 250 s pulse test <0.5 % duty cycle v ge = 15v. 250 s pulse test <0.5 % duty cycle i c = 23.5a i c = 47a i c = 94a i c = 47a i c = 94a 12v 5v 15v i c = 47a t j = 25c v ce = 480v v ce = 300v v ce = 120v t j = 25c t j = -55c v ge = 15v t j = 55c t j = 150c v ce , collector-to-emitter voltage (v) figure 1, output characteristics (t j = 25c) i c , collector current (a) t j = 25c t j = 125c v ce , collector-to-emitter voltage (v) figure 2, output characteristics (t j = 25c) i c , collector current (a) t j = 125c v ge , gate-to-emitter voltage (v) figure 3, transfer characteristics i c , collector current (a) v ge , gate-to-emitter voltage (v) figure 5, on state voltage vs gate-to-emitter voltage v ce , collector-to-emitter voltage (v) gate charge (nc) figure 4, gate charge v ge , gate-to-emitter voltage (v) t j , junction temperature (c) figure 6, on state voltage vs junction temperature v ce , collector-to-emitter voltage (v) t c , case temperature (c) figure 8, dc collector current vs case temperature i c , dc collector current (a) 0.75 0.80 0.85 0.90 0.95 1.00 1.05 1.10 -.50 -.25 0 25 50 75 100 125 150 t j , junction temperature figure 7, threshold voltage vs junction temperature v gs(th) , threshold voltage (normalized) 8v 9v i c = 23.5a 10v 13v downloaded from: http:///
052-6323 rev d 6 - 2011 16 18 20 22 24 26 28 30 0 20 40 60 80 100 0 50 100 150 200 250 300 0 20 40 60 80 100 0 1000 2000 3000 4000 0 25 50 75 100 125 0 1000 2000 3000 4000 5000 6000 7000 8000 0 10 20 30 40 50 0 500 1000 1500 2000 2500 3000 3500 0 20 40 60 80 100 0 1000 2000 3000 4000 0 20 40 60 80 100 0 20 40 60 80 100 120 140 160 0 20 40 60 80 100 0 20 40 60 80 100 0 20 40 60 80 100 v ge =15v,t j =125c v ge =15v,t j =25c v ce = 400v r g = 4.7 l = 100 h v ce = 400v v ge = +15v r g =4.7 v ce = 400v t j = 25c , or 125c r g = 4.7 l = 100 h v ge = 15v v ce = 400v v ge = +15v r g = 4.7 v ce = 400v v ge = +15v r g = 10 r g = 4.7 , l = 100 h, v ce = 400v t j = 125c t j = 25c t j = 125c t j = 25c r g = 4.7 , l = 100 h, v ce = 400v t j = 25 or 125c,v ge = 15v t j = 125c, v ge = 15v t j = 25c, v ge = 15v e on2, 94a e on2, 47a e off, 47a e on2, 23a e off, 23a v ce = 400v v ge = +15v t j = 125c e on2, 94a e on2, 47a e off, 94a e off, 47a e on2, 23a e off, 23a i ce , collector-to-emitter current (a) figure 9, turn-on delay time vs collector current t d(on) , turn-on delay time (ns) i ce , collector-to-emitter current (a) figure 10, turn-off delay time vs collector current t d(off) , turn-off delay time (ns) i ce , collector-to-emitter current (a) figure 11, current rise time vs collector current t r , rise time (ns) i ce , collector-to-emitter current (a) figure 12, current fall time vs collector current t r , fall time (ns) i ce , collector-to-emitter current (a) figure 13, turn-on energy loss vs collector current e on2 , turn on energy loss ( j) i ce , collector-to-emitter current (a) figure 14, turn-off energy loss vs collector current e off , turn off energy loss ( j) r g , gate resistance (ohms) figure 15, switching energy losses vs gate resistance switching energy losses ( j) t j , junction temperature (c) figure 16, switching energy losses vs junction temperature switching energy losses ( j) e off, 94a typical performance curves APT80GA60B_s downloaded from: http:///
052-6323 rev d 6 - 2011 typical performance curves APT80GA60B_s 0 0.05 0.10 0.15 0.20 0.25 10 -5 10 -4 10 -3 10 -2 0.1 1 0 100 200 300 400 500 10 100 1000 10000 z jc , thermal impedance (c/w) 0.3 d = 0.9 0.7 single pulse rectangular pulse duration (seconds) figure 19, maximum effective transient thermal impedance, junction-to-case vs pulse duration 0.5 0.1 0.05 c oes c res c ies peak t j = p dm x z jc +t c duty factor d = t 1 / t 2 t 2 t 1 p dm note: v ce , collector-to-emitter voltage (volts) figure 17, capacitance vs collector-to-emitter voltage c, capacitance (pf) 0.1 1 10 100 1000 1 10 100 1000 v ce , collector-to-emitter voltage figure 18, minimum switching safe operating area i c , collector current (a) downloaded from: http:///
052-6323 rev d 6 - 2011 figure 21, turn-on switching waveforms and de? nitions t j = 125c collector current collector voltage gate voltage 5% 10% t d(on) 90% 10% t r 5% switching energy figure 22, turn-off switching waveforms and de? nitions t j = 125c collector voltage collector current gate voltage switching energy 0 t d(off) 10% t f 90% i c a d.u.t. v ce v cc apt30dq60 figure 20, inductive switching test circuit APT80GA60B_s 15.49 (.610)16.26 (.640) 5.38 (.212)6.20 (.244) 6.15 (.242) bsc 4.50 (.177) max. 19.81 (.780)20.32 (.800) 20.80 (.819)21.46 (.845) 1.65 (.065)2.13 (.084) 1.01 (.040)1.40 (.055) 3.50 (.138)3.81 (.150) 2.87 (.113)3.12 (.123) 4.69 (.185)5.31 (.209) 1.49 (.059) 2.49 (.098) 2.21 (.087)2.59 (.102) 0.40 (.016) gate 5.45 (.215) bsc 2-plcs. 15.95 (.628)16.05(.632) 1.22 (.048)1.32 (.052) 5.45 (.215) bsc {2 plcs. } 4.98 (.196)5.08 (.200) 1.47 (.058) 1.57 (.062) 2.67 (.105)2.84 (.112) 0.46 (.018) {3 plcs} 0.56 (.022) heat sink (drain)and leads are plated 3.81 (.150)4.06 (.160) (base of lead) (heat sink) 1.98 (.078)2.08 (.082) gate 0.020 (.001)0.178 (.007) 1.27 (.050)1.40 (.055) 11.51 (.453)11.61 (.457) 13.41 (.528)13.51(.532) revised8/29/97 1.04 (.041)1.15(.045) 13.79 (.543)13.99(.551) revised 4/18/95 collectoremitter collector collector emitter collector e1 sac: tin, silver, copper to-247 package outline e3 100% sn plated d 3 pak package outline dimensions in millimeters (inches) 1.016 (.040) dimensions in millimeters (inches) downloaded from: http:///
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